Importance of temperature dependence of interface traps in high-k metal gate stacks for silicon spin-qubit development

While semiconductor-based spin qubits have demonstrated promising fidelities exceeding 99.9%, their coherence time is limited by the presence of charge noise. However, fast process optimization for reduced noise becomes challenging due to time-consuming nature cryogenic measurements. Hence, this work explores low frequency analysis methods determine interface trap densities, temperature dependence, and correlation with observed levels. The herein presented results provide evidence strong dependence density. Moreover, good agreement between pumping conductance-based methods. Finally, differences in dependent trends flicker are observed, indicating additional influences, which need be considered further device optimization.